Single-Port Five-Transistor SRAM Cell with Reduced Leakage Current in Standby

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Single-port Five-transistor Sram Cell with Reduced Leakage Current in Standby

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ژورنال

عنوان ژورنال: International Journal of VLSI Design & Communication Systems

سال: 2016

ISSN: 0976-1527,0976-1357

DOI: 10.5121/vlsic.2016.7401